冯万祥

姓名：冯万祥

所在学科：物理学院

职称：副教授

联系电话：

E-mail： wxfeng[at]bit.edu.cn

通信地址：北京海淀区中关村南大街5号 100081

个人主页：http://www.qfmda.com/subweb/members/wxfeng.html

个人简历

2009.9 - 2012.6 中国科学院物理研究所   博士

2006.9 - 2009.6 吉林大学超硬材料国家重点实验室   硕士

2002.9 - 2006.6 吉林大学物理学院   学士

工作经历

2017.3 – 至今  德国于利希研究中心   洪堡访问学者

2016.6 – 2016.8 台湾大学物理系   访问学者

2015.8 – 至今  北京理工大学物理学院   副教授

2015.3 – 2015.8 台湾大学物理系   访问学者

2012.7 – 2015.7 北京理工大学物理学院   讲师

2011.3 – 2012.3 美国橡树岭国家实验室和田纳西大学   访问研究生

科研方向

主要研究方向是计算凝聚态物理，在发展第一性原理计算方法的同时，也关注凝聚态物理中的一些新奇现象，例如三维Z2拓扑绝缘体、反常/自旋/能谷霍尔效应、量子反常/自旋霍尔效应、三维Dirac/Weyl/nodal-line半金属、磁光Kerr/Faraday效应。

近年来主持和参与的科研项目：

[1]国家自然科学基金面上项目“拓扑绝缘体新材料以及表面物性的第一性原理研究”（项目负责人，2014 – 2017）

[2]教育部博士点新教师项目“Bi2Te3/BiTeI超晶格体系中拓扑表面态和巨Rashba自旋劈裂的第一性原理研究”（项目负责人，2014 – 2016）

[3]北京理工大学优秀青年教师资助计划（项目负责人，2013 – 2014）

[4]科技部973子课题“低维体系中狄拉克费米子和新奇玻色子量子态的多场调控”（主要参与人，2014 – 2018）

学术成就

截至2018年2月，发表了包括Nat. Phys.、Phys. Rev. Lett.、Nano Lett.在内的30余篇SCI学术论文，总计被引用3500余次(Web of Science)，h-index为15。目前是Nat. Commun.、Phys. Rev. Lett.、Phys. Rev. B、Appl. Phys. Lett.等20余个凝聚态物理领域主流期刊的审稿人。

Researcher ID:  http://www.researcherid.com/rid/P-7000-2014

主要论文列表：

[1]Fei Li, Xiaodong Zhou, Wanxiang Feng*,  Botao Fu, & Yugui Yao, “Thickness-dependent magneto-optical effects in hole-doped GaS and GaSe multilayers: a first-principles study”, New J. Phys. 20, 043048 (2018).

[2]Xiaodong Zhou, Wanxiang Feng*, Fei Li, & Yugui Yao*, “Large magneto-optical effects in hole-doped blue phosphorene and gray arsenene”, Nanoscale 9, 17405 (2017).

[3]Botao Fu, Wanxiang Feng*, Xiaodong Zhou, & Yugui Yao*, “Effects of hole doping and strain on magnetism in buckled phosphorene and arsenene”, 2D Mater. 4, 025107 (2017).

[4]Wanxiang Feng, Guang-Yu Guo, & Yugui Yao, “Tunable magneto-optical effects in hole-doped group-IIIA metal- monochalcogenide monolayers”, 2D Mater. 4, 015017 (2017).

[5]Xiaodong Zhou, Wanxiang Feng*, Shan Guan, Botao Fu, Wenyong Su, & Yugui Yao, “Computational characterization of monolayer C3N: A two-dimensional nitrogen- graphene crystal”, J. Mater. Res. (invited article) 32, 2993 (2017).

[6]Wanxiang Feng, Cheng-Cheng Liu, Gui-Bin Liu, Jin-Jian Zhou, & Yugui Yao, “First-principles investigations on the Berry phase effect in spin-orbit coupling materials”, Comp. Mater. Sci. (invited review), 112, 428 (2016).

[7]T. Suzuki, R. Chisnell, A. Devarakonda, Y.-T. Liu, W. Feng, D. Xiao, J. W. Lynn, & J. G. Checkelsky, “Large anomalous Hall effect in a half-Heusler antiferromagnet”, Nature Phys. 12, 1119 (2016).

[8]Wanxiang Feng, Guang-Yu Guo, Jian Zhou, Yugui Yao, & Qian Niu, “Large magneto-optical Kerr effect in noncollinear antiferromagnets Mn3X (X = Rh, Ir, or Pt)”, Phys. Rev. B 92, 144426 (2015).

[9]Jin-Jian Zhou, Wanxiang Feng, Cheng-Cheng Liu, Shan Guan, & Yugui Yao, “Large-gap quantum spin Hall insulator in single layer bismuth monobromide Bi4Br4”, Nano Lett. 14, 4767 (2014).

[10]Yanfeng Ge, Wenhui Wan, Wanxiang Feng*, Di Xiao, & Yugui Yao*, “Effect of doping and strain modulations on electron transport in monolayer MoS2”, Phys. Rev. B 90, 035414 (2014).

[11]Wanxiang Feng*, Jun Ding, Botao Fu, Ying Zhang, & Yugui Yao*, “Core-hole effect on topological band order in cubic semiconductors: A first- principles study”, Europhys. Lett. 106, 27008 (2014).

[12]Di Xiao, Gui-Bin Liu, Wanxiang Feng, Xiaodong Xu, & Wang Yao, “Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides”, Phys. Rev. Lett. 108, 196802 (2012).

[13]Wanxiang Feng, Yugui Yao, Wenguang Zhu, Jinjian Zhou, Wang Yao, & Di Xiao, “Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first- principles study”, Phys. Rev. B 86, 165108 (2012).

[14]Wanxiang Feng, Wenguang Zhu, Hanno H. Weitering, G. Malcolm Stocks, Yugui Yao, & Di Xiao, “Strain tuning of topological band order in cubic semiconductors”, Phys. Rev. B 85, 195114 (2012).

[15]Wanxiang Feng, Jun Wen, Jinjian Zhou, Di Xiao, & Yugui Yao, “First-principles calculation of Z2 topological invariants within the FP-LAPW formalism”, Comp. Phys. Comm. 183, 1849 (2012).

[16]Wanxiang Feng & Yugui Yao, “Three dimensional topological insulators: A review on host materials”, Sci. China-Phys. Mech. Astron. (invited review) 55, 2199 (2012).

[17]Wanxiang Feng, Di Xiao, Jun Ding, & Yugui Yao, “Three-dimensional topological insulators in I-III-VI2 and II-IV-V2 chalcopyrite semiconductors”, Phys. Rev. Lett. 106, 016402 (2011).

[18]Cheng-Cheng Liu, Wanxiang Feng, & Yugui Yao, “Quantum spin Hall effect in silicene and two-dimensional germanium”, Phys. Rev. Lett. 107, 076802 (2011).

[19]Wei Zhang, Rui Yu, Wanxiang Feng, Yugui Yao, Hongming Weng, Xi Dai, & Zhong Fang, “Topological aspect and quantum magnetoresistance of β-Ag2Te”, Phys. Rev. Lett. 106, 156808 (2011).

[20]Jun Ding, Zhenhua Qiao, Wanxiang Feng, Yugui Yao, & Qian Niu, “Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study”, Phys. Rev. B 84, 195444 (2011).

[21]Wanxiang Feng, Di Xiao, Ying Zhang, & Yugui Yao, “Half-Heusler topological insulators: A first-principles study with the Tran-Blaha modified Becke-Johnson density functional”, Phys. Rev. B 82, 235121 (2010).

[22]Di Xiao, Yugui Yao, Wanxiang Feng, Jun Wen, Wenguang Zhu, Xing-Qiu Chen, G. Malcolm Stocks, & Zhenyu Zhang, “Half-Heusler compounds as a new class of three-dimensional topological insulators”, Phys. Rev. Lett. 105, 096404 (2010).

[23]Zhenhua Qiao, Shengyuan A. Yang, Wanxiang Feng, Wang-Kong Tse, Jun Ding, Yugui Yao, Jian Wang, & Qian Niu, “Quantum anomalous Hall effect in graphene from Rashba and exchange effects”, Phys. Rev. B (rapid comm.) 82, 161414 (2010).